The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Feb. 22, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Ingo Muri, Villach, AT;

Friedrich Kroener, Villach, AT;

Werner Schustereder, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 29/868 (2006.01); H01L 21/265 (2006.01); H01L 21/263 (2006.01); H01L 21/324 (2006.01); H01L 21/3063 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/26506 (2013.01); H01L 21/3063 (2013.01); H01L 21/3242 (2013.01);
Abstract

A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.


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