The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2017
Filed:
Jun. 16, 2016
Applicant:
D2s, Inc., San Jose, CA (US);
Inventors:
Akira Fujimura, Saratoga, CA (US);
Harold Robert Zable, Palo Alto, CA (US);
Assignee:
D2S, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/78 (2012.01); G03F 1/20 (2012.01); G03F 1/70 (2012.01); G03F 7/20 (2006.01); G06F 17/50 (2006.01); H01J 37/317 (2006.01); H01J 37/302 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 1/78 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 1/20 (2013.01); G03F 1/70 (2013.01); G03F 7/20 (2013.01); G03F 7/2037 (2013.01); G03F 7/2063 (2013.01); G03F 7/7025 (2013.01); G06F 17/50 (2013.01); G06F 17/5068 (2013.01); G06F 17/5081 (2013.01); H01J 37/3026 (2013.01); H01J 37/3174 (2013.01); H01J 37/3177 (2013.01); H01J 2237/31764 (2013.01); H01J 2237/31771 (2013.01); H01J 2237/31776 (2013.01); Y10S 430/143 (2013.01);
Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.