The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2017

Filed:

Nov. 15, 2013
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Hiroaki Shishido, Tokyo, JP;

Atsushi Kominato, Tokyo, JP;

Osamu Nozawa, Tokyo, JP;

Toshiharu Kikuchi, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/50 (2012.01); G03F 1/60 (2012.01); G03F 7/20 (2006.01); C03C 3/06 (2006.01); C03C 17/34 (2006.01);
U.S. Cl.
CPC ...
G03F 1/50 (2013.01); C03C 3/06 (2013.01); C03C 17/3435 (2013.01); G03F 1/60 (2013.01); C03C 2218/32 (2013.01); C03C 2218/328 (2013.01); C03C 2218/34 (2013.01);
Abstract

Provided are a mask blank for which worsening of flatness has been inhibited, a transfer mask, a method of manufacturing a mask blank, a method of manufacturing a transfer mask, and a method of manufacturing a semiconductor device using this transfer mask. The mask blank is a mask blank provided with a thin film on a main surface of a glass substrate, wherein the glass substrate has a hydrogen content of less than 7.4×10molecules/cm, the thin film is made of a material containing tantalum and being substantially free of hydrogen, and the thin film is formed in contact with the main surface of the glass substrate.


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