The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Apr. 23, 2015
Applicant:
Macronix International Co., Ltd., Hsin-chu, TW;
Inventors:
Shaw-Hung Ku, Taipei, TW;
Chih-Hsiung Lee, Puzih, TW;
Assignee:
Macronix International Co., Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); H01L 21/28273 (2013.01); H01L 29/4916 (2013.01);
Abstract
Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the formation of a p-n junction in a conductive layer. The method may allow for the production of semiconductor memory devices of reduced size.
Quick Actions:
Ku, Shaw-Hung. (2017). Semiconductor device with a p-n junction for reduced charge leakage and method of manufacturing the same (U.S. Patent No. 9620603). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9620603
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile