The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Apr. 08, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Yao-Fu Chan, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is provided. A stack layer is formed on a substrate. The stack layer is patterned to form a plurality of stack structures extending in a first direction. A trench extending in the first direction is located between two adjacent stack structures. Each trench has a plurality of wide portions and a plurality of narrow portions. A maximum width of the wide portions in a second direction is larger than a maximum width of the narrow portions in the second direction. A charge storage layer is formed to cover a bottom surface and sidewalls of the wide portion and fill up the narrow portion. A conductive layer is formed to fill up the wide portion. A semiconductor device formed by the method is also provided.