The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Mar. 10, 2015
Applicants:

Weize Chen, Phoenix, AZ (US);

Hubert M. Bode, Haar, DE;

Andreas Laudenbach, Haag, DE;

Kurt U. Neugebauer, Vaterstetten, DE;

Patrice M. Parris, Phoenix, AZ (US);

Inventors:

Weize Chen, Phoenix, AZ (US);

Hubert M. Bode, Haar, DE;

Andreas Laudenbach, Haag, DE;

Kurt U. Neugebauer, Vaterstetten, DE;

Patrice M. Parris, Phoenix, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/00 (2006.01); H02H 3/02 (2006.01); H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/8222 (2013.01); H01L 27/0259 (2013.01); H01L 27/067 (2013.01);
Abstract

Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.


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