The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Feb. 23, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H05K 3/34 (2006.01); B23K 35/24 (2006.01); B23K 35/26 (2006.01); B23K 35/00 (2006.01); B23K 35/02 (2006.01); H05K 3/24 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); B23K 35/004 (2013.01); B23K 35/007 (2013.01); B23K 35/0244 (2013.01); B23K 35/24 (2013.01); B23K 35/262 (2013.01); B23K 35/264 (2013.01); H01L 21/76843 (2013.01); H01L 23/49811 (2013.01); H01L 23/49866 (2013.01); H01L 24/05 (2013.01); H01L 24/81 (2013.01); H05K 3/3463 (2013.01); H05K 3/3494 (2013.01); B23K 2201/40 (2013.01); H01L 24/03 (2013.01); H01L 24/16 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81075 (2013.01); H01L 2224/81211 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/15311 (2013.01); H05K 3/244 (2013.01); H05K 3/3436 (2013.01); H05K 2201/10734 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.