The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Dec. 16, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/509 (2006.01); C23C 16/56 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/14 (2013.01); C23C 16/509 (2013.01); C23C 16/56 (2013.01); H01L 21/76843 (2013.01); H01L 21/28518 (2013.01); H01L 21/76855 (2013.01);
Abstract
A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiClgas as a Ti source and a Hgas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.