The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Oct. 01, 2015
Applicant:
Tokyo Ohka Kogyo Co., Ltd., Kawasaki, JP;
Inventor:
Yoshihiro Sawada, Kawasaki, JP;
Assignee:
TOKYO OHKA KOGYO CO., LTD., Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/228 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); H01L 21/228 (2013.01); H01L 21/2225 (2013.01); H01L 21/2255 (2013.01);
Abstract
A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.