The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Feb. 12, 2016
Applicant:

Western Digital Technologies, Inc., Irvine, CA (US);

Inventors:

Dengtao Zhao, Santa Clara, CA (US);

Yongke Sun, Pleasanton, CA (US);

Haibo Li, Sunnyvale, CA (US);

Jui-Yao Yang, San Jose, CA (US);

Kroum Stoev, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 16/10 (2006.01); G11C 11/406 (2006.01); G11C 29/44 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 29/52 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 11/406 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 16/3495 (2013.01); G11C 29/4401 (2013.01); G11C 29/52 (2013.01); G11C 16/0483 (2013.01);
Abstract

Systems and methods for managing data retention in a solid-state storage system utilizing data retention flag bytes are disclosed. A data storage device includes a non-volatile memory comprising a plurality of non-volatile memory devices and a controller configured to write data to a memory unit of the non-volatile memory array and write a data retention flag value indicating a number of bits of the written data programmed in a first of a plurality of logical states. The controller is further configured to read the data and determine a number of bits having the first of the plurality of logical states in the read data, and determine a difference between the number of bits of the written data programmed in the first logical state and the number of bits having the first logical state in the read data. The difference is used to determine data retention characteristics of the non-volatile memory.


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