The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Mar. 25, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Hang-Ting Lue, Hsinchu, TW;
Kuo-Pin Chang, Miaoli, TW;
Macronix International Co., Ltd., Hsinchu, Taiwan, TW;
Abstract
A method is provided for operating a NAND array that includes a plurality of blocks of memory cells. A block of memory cells in the plurality of blocks includes a plurality of NAND strings having channel lines between first string select switches and second string select switches. The plurality of NAND strings shares a set of word lines between the first and second string select switches. A channel-side erase voltage is applied to the channel lines through the first string select switches in a selected block. Word line-side erase voltages are applied to a selected subset including more than one member of the set of word lines shared by NAND strings in the selected block to induce tunneling in memory cells coupled to the selected subset, while tunneling is inhibited in memory cells coupled to an unselected subset including more than one member of the set of word lines.