The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Sep. 21, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jody Fronheiser, Delmar, NY (US);

Ajey P. Jacob, Albany, NY (US);

Witold P. Maszara, Morgan Hill, CA (US);

Kerem Akarvardar, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/165 (2013.01); H01L 29/267 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

One illustrative device disclosed herein includes a substrate fin formed in a substrate comprised of a first semiconductor material, wherein at least a sidewall of the substrate fin is positioned substantially in a <100> crystallographic direction of the crystalline structure of the substrate, a replacement fin structure positioned above the substrate fin, wherein the replacement fin structure is comprised of a semiconductor material that is different from the first semiconductor material, and a gate structure positioned around at least a portion of the replacement fin structure.


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