The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Jun. 27, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chen-Wei Pan, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/00 (2006.01); H01L 27/06 (2006.01); H01L 29/167 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/861 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/73 (2013.01); H01L 29/861 (2013.01); H01L 29/785 (2013.01);
Abstract
A bipolar junction transistor (BJT) and a diode including fin structures are provided in the present invention. In the BJT and the diode of the present invention, first doped layers are formed in a first fin and below first epitaxial structures in the first fin, and the first doped layers are connected with one another for improving related electrical performance of the BJT and the diode including fin structures.