The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Feb. 01, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Stephan A. Cohen, Wappingers Falls, NY (US);

Eric G. Liniger, Sandy Hook, CT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/31111 (2013.01); H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76844 (2013.01); H01L 21/76852 (2013.01); H01L 21/76879 (2013.01); H01L 21/76885 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53252 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An interconnect structure includes a first dielectric material having an undercut region located at an upper surface thereof. A first conductive structure is located above a first area of the undercut region. The first conductive structure comprises a first conductive metal portion having a diffusion barrier portion located on one sidewall surface of the first conductive metal portion and having a metal liner located on another sidewall surface and a bottom surface of the first conductive metal portion. A second conductive structure is located above a second area of the undercut region. The second conductive structure comprises a second conductive material portion having a diffusion barrier portion located on one sidewall surface of the second conductive material portion and having a metal liner located on another sidewall surface and a bottom surface of the second conductive metal portion. A gap is located between the first and second conductive structures.


Find Patent Forward Citations

Loading…