The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Oct. 28, 2015
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Steven Robert Sherman, Newton, MA (US);
Todd Henry, Boxford, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/306 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); G03F 7/70533 (2013.01); G03F 7/70625 (2013.01); H01L 21/0273 (2013.01); H01L 21/30604 (2013.01); H01L 22/20 (2013.01); H01L 22/12 (2013.01);
Abstract
Methods of processing a workpiece are disclosed. Variability of the critical dimension of semiconductor structures may be affected by the critical dimension of the patterned mask. Ions may be implanted into the patterned mask to change the critical dimension. The ions may be implanted in accordance with an ion implant map, which determines an appropriate dose, energy and type based on the measured critical dimension of the patterned mask at a plurality of locations.