The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jan. 20, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Amit Berman, Ramat Gan, IL;

Uri Beitler, Ramat Gan, IL;

Jun Jin Kong, Gyeonggi-do, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01); G11C 7/10 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1006 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 2207/102 (2013.01);
Abstract

A method of operating a memory device is provided. The memory device includes a plurality of multi-level memory cells of which each memory cell includes L levels. Data which is expressed in a binary number is received. A P-length string is generated from the data. The P-length string is converted to a Q-length string. The Q-length string is distributed using I levels by eliminating at least one level from the L levels. P and Q represent binary bit lengths of the P-length string and the Q-length string. Q is greater than P. L represents a maximum number of levels which each multi-level memory cell has. I is smaller than L. The Q-length string is programmed into the plurality of memory cells.


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