The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Dec. 23, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ralf Hofmann, Soquel, CA (US);

Kevin Moraes, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/22 (2012.01); C23C 14/35 (2006.01); G03F 7/20 (2006.01); C23C 14/16 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); C23C 14/16 (2013.01); C23C 14/352 (2013.01); G03F 7/70958 (2013.01);
Abstract

An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.


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