The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Feb. 25, 2014
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Koganei-shi, Tokyo, JP;
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Koganei, JP;
TAMURA CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Koganei-Shi, Tokyo, JP;
Abstract
Provided is a method for controlling a donor concentration in a GaO-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a GaO-based single crystal body and an electrode. A donor concentration in a GaO-based single crystal body is controlled by a method which includes a step wherein Si, which serves as a donor impurity, is introduced into the GaO-based single crystal body by an ion implantation method at an implantation concentration of 1×10cmor less, so that a donor impurity implanted region is formed in the GaO-based single crystal body, the donor impurity implanted region having a higher donor impurity concentration than the regions into which Si is not implanted, and a step wherein Si in the donor impurity implanted region is activated by annealing, so that a high donor concentration region is formed.