The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
May. 15, 2012
Applicants:
Hideo Kato, Gifu, JP;
Shinichi Kyufu, Yamaguchi, JP;
Masamichi Ohkubo, Burghausen, DE;
Inventors:
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 15/00 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01); C30B 35/00 (2006.01); C30B 30/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/005 (2013.01); C30B 15/02 (2013.01); C30B 15/10 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); C30B 35/002 (2013.01);
Abstract
Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied.