The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 07, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Wei-Hang Huang, Kaohsiung, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Shih-Chang Liu, Alian Township, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 43/10 (2013.01);
Abstract
A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer.