The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Mar. 20, 2003
Veli Kartal, München, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Veli Kartal, München, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a body () consisting of doped semiconductor material having a defined mean free path length (lambda n) for free charge carriers (CP), and a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n) is disclosed. An epitactic crystal layer () consisting of doped semiconductor material is produced on a substrate crystal () consisting of semiconductor material having the defined mean free path length (lambda n), said crystal layer having, at least locally, a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n). The body () can also be produced by joining two crystal bodies () consisting of doped semiconductor material.