The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Nov. 06, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Chieh Chou, New Taipei, TW;
Tsai-Feng Yang, Ruisui Township, TW;
Chun-Yi Yang, Hsinchu, TW;
Kun-Ming Huang, Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/735 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/76237 (2013.01); H01L 21/76283 (2013.01); H01L 29/7393 (2013.01); H01L 29/7394 (2013.01);
Abstract
A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.