The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Jun. 01, 2015
Applicants:

Byung-jun Park, Yongin-si, KR;

Seung-hun Shin, Suwon-si, KR;

Inventors:

Byung-Jun Park, Yongin-si, KR;

Seung-Hun Shin, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 23/48 (2006.01); H01L 31/101 (2006.01); H01L 31/02 (2006.01); H01L 31/14 (2006.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 31/022408 (2013.01); H01L 21/7682 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.


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