The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Nov. 04, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
One or more methods of forming shallow trench isolation (STI) and resulting semiconductor arraignments are provided. A method of forming STI includes forming a nitride liner in a first opening and second opening and recessing the nitride liner in the first opening and second opening while forming an oxide structure in the first opening and second opening, thus forming a first STI region in the first opening and a second STI region in the second opening. A semiconductor arraignment includes a first STI region in an active area and a second STI region in an isolation area, where a first recessed nitride layer height in the first STI region is different than a second recessed nitride layer height in the second STI region.