The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Feb. 04, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Wonchul Lee, San Ramon, CA (US);
Qian Fu, Pleasanton, CA (US);
John S. Drewery, Santa Clara, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/467 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01J 37/32091 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/32137 (2013.01); H01L 21/467 (2013.01);
Abstract
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.