The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Mar. 25, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Kuo-Pin Chang, Miaoli, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A NAND array includes blocks of memory cells. A block of memory cells includes a plurality of strings having channel lines between first and second string select switches. The strings share a set of word lines between the first and second string select switches. A channel-side voltage can be applied to the channel lines. A control voltage can be applied to a selected subset of the first string select switches. The channel lines can be floated at ends of the second string select switches. Tunneling in memory cells coupled to an unselected subset of the first string select switches can be inhibited. Word line-side erase voltages can be applied to word lines in the set of word lines in the block to induce tunneling in memory cells coupled to the word lines and coupled to the selected subset of the first string select switches.