The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jan. 29, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); G01R 31/3185 (2006.01); G01R 31/3177 (2006.01); H01J 37/30 (2006.01); H01J 37/317 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G01R 31/318572 (2013.01); G01R 31/3177 (2013.01); G01R 31/318558 (2013.01); G01R 31/2607 (2013.01); G01R 31/318552 (2013.01); G01R 31/318594 (2013.01); H01J 37/3007 (2013.01); H01J 37/3171 (2013.01); H01J 2237/15 (2013.01); H01J 2237/30472 (2013.01);
Abstract
An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.