The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Feb. 27, 2012
Applicants:

Anton Rozen, Gedera, IL;

Leonid Fleshel, Hertzelia, IL;

Michael Priel, Netanya, IL;

Yoav Weizman, Kfar-Vitkin, IL;

Inventors:

Anton Rozen, Gedera, IL;

Leonid Fleshel, Hertzelia, IL;

Michael Priel, Netanya, IL;

Yoav Weizman, Kfar-Vitkin, IL;

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/66 (2006.01); G01R 15/24 (2006.01); G01R 31/311 (2006.01);
U.S. Cl.
CPC ...
G01N 21/66 (2013.01); G01R 15/24 (2013.01); G01R 31/311 (2013.01);
Abstract

A method of detecting irregular high current flow within an integrated circuit (IC) device is described. The method comprises obtaining infrared (IR) emission information for the IC device, identifying at least one functional component within the IC device comprising a high current flow, based at least partly on the obtained IR emission information, obtaining IR emission information for at least one reference component within the IC device, and determining whether the high current flow of the at least one functional component comprises an irregular high current flow based at least partly on a comparison of respective IR emission information for the at least one functional component and the at least one reference component.


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