The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Apr. 03, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
Yutaka Akiyama, Kawasaki, JP;
Yasutaka Nakashiba, Kawasaki, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer.