The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Sep. 11, 2015
Jiong-guang Su, Hsinchu County, TW;
Hung-wen Chou, Hsinchu County, TW;
Jiong-Guang Su, Hsinchu County, TW;
Hung-Wen Chou, Hsinchu County, TW;
Other;
Abstract
An adaptive duo-gate MOSFET includes a trench MOSFET and an adaptive element. The trench MOSFET includes a source, a drain, a first gate, a second gate, and a dielectric layer between the first and second gates. Herein, the first gate may generate charge-coupling in blocking operation, and the second gate may form channel in the trench MOSFET when in conduction operation. The adaptive element is electrically coupled to the first gate, the second gate, and the source respectively. When a potential difference between the second gate and the source is larger than a predetermined value, the first gate and the source are electrically disconnected and then the first gate and the second gate are electrically connected. After a predetermined time, the first gate and the second gate are electrically disconnected and then the first gate and the source are electrically connected.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile