The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 13, 2014
Applicant:
Tsmc Solar Ltd., Taichung, TW;
Inventors:
Li Xu, Taichung, TW;
Wen-Chin Lee, Baoshan Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/02299 (2013.01); H01L 21/02387 (2013.01); H01L 31/0323 (2013.01); H01L 31/1892 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control.