The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 12, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/872 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/063 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0684 (2013.01); H01L 29/0692 (2013.01); H01L 29/36 (2013.01); H01L 29/417 (2013.01); H01L 29/7393 (2013.01); H01L 29/7397 (2013.01); H01L 29/8611 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01);
Abstract
A p-type anode layer () is provided on an upper surface of an n-type drift layer (). An n-type cathode layer () is provided on a lower surface of the n-type drift layer (). An n-type buffer layer () is provided between the n-type drift layer () and the n-type cathode layer (). A peak impurity concentration in the n-type buffer layer () is higher than that in the n-type drift layer () and lower than that in the n-type cathode layer (). A gradient of carrier concentration at a connection between the n-type drift layer () and the n-type buffer layer () is 20 to 2000 cm.