The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Dec. 12, 2014
Renesas Electronics Electronics, Kawasaki-shi, JP;
Tatsuo Nakayama, Kawasaki, JP;
Hironobu Miyamoto, Kawasaki, JP;
Yasuhiro Okamoto, Kawasaki, JP;
Yoshinao Miura, Kawasaki, JP;
Takashi Inoue, Kawasaki, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
Characteristics of a semiconductor device are improved. A semiconductor device includes a potential fixing layer, a channel underlayer, a channel layer, and a barrier layer formed above a substrate, a trench that penetrates the barrier layer and reaches as far as a middle of the channel layer, a gate electrode disposed by way of an insulation film in the trench, and a source electrode and a drain electrode formed respectively over the barrier layer on both sides of the gate electrode. A coupling portion inside the through hole that reaches as far as the potential fixing layer electrically couples the potential fixing layer and the source electrode. This can reduce fluctuation of the characteristics such as a threshold voltage and an on-resistance.