The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Oct. 10, 2014
Globalfoundries Inc., Grand Cayman, KY;
Jerome Ciavatti, Hopewell Junction, NY (US);
Yanxiang Liu, Glenville, NY (US);
Vara Govindeswara Reddy Vakada, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A non-planar lateral drift MOS device eliminates the need for a field plate extension, which reduces gate width. In one example, two sources and two comparatively small gates in a raised structure allow for two channels and a dual current with mirrored flows, each traveling into and downward through a center region of a connecting well that connects the substrate with the drain areas and shallow wells containing the source areas, the current then traveling in opposite directions within the substrate region of the connecting well toward the two drains. The source and drain areas may be separate raised structures or isolated areas of a continuous raised structure.