The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Dec. 04, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chan-Hong Chern, Palo Alto, CA (US);

Chih-Chang Lin, San Jose, CA (US);

Julie Tran, San Jose, CA (US);

Jacklyn Chang, San Ramon, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 21/321 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/3212 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 21/82385 (2013.01);
Abstract

The described embodiments of mechanisms for placing dummy gate structures next to and/or near a number of wide gate structures reduce dishing effect for gate structures during chemical-mechanical polishing of gate layers. The arrangements of dummy gate structures and the ranges of metal pattern density have been described. Wide gate structures, such as analog devices, can greatly benefit from the reduction of dishing effect.


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