The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Dec. 28, 2012
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Sumeet S. Bhagavat, St. Charles, MO (US);
Roland R. Vandamme, Wentzville, MO (US);
SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;
Abstract
In one aspect, a method of predicting warp in a plurality of wafers after an epitaxial layer deposition process is provided. The method includes receiving, by a processor, a measured resistivity of a first wafer of the plurality of wafers, receiving, by the processor, a measured shape of the first wafer after at least one of a grinding process and an etching process, and calculating, using the processor, a change in wafer shape during the epitaxial layer deposition process. The method further includes superposing, using the processor, the calculated shape change onto the measured shape of the first wafer to determine a post-epitaxial wafer shape and calculating, using the processor, a post-epitaxial warp value based on the determined post-epitaxial wafer shape.