The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Dec. 05, 2013
Stmicroelectronics, Inc., Coppell, TX (US);
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Nicolas Loubet, Guilderland, NY (US);
Stephane Monfray, Eybens, FR;
Ronald Kevin Sampson, Lagrangeville, NY (US);
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
STMICROELECTRONICS, INC., Coppell, TX (US);
Abstract
Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer. Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.