The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Feb. 05, 2014
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Seiichiro Kanno, Tokyo, JP;
Masashi Fujita, Tokyo, JP;
Naoya Ishigaki, Tokyo, JP;
Makoto Nishihara, Tokyo, JP;
Kumiko Shimizu, Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The present invention provides a high-throughput scanning electron microscope in which a wafer () is held by an electrostatic chuck (), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer () is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (). A drill hole is provided on the rear surface of the electrostatic chuck (), and a thermometer () is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer () is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (), and measuring begins at individual measurement sites after the measurement limit time has elapsed.