The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jun. 09, 2012
Mads Hommelgaard, Kirkland, WA (US);
Andrew Horch, Seattle, WA (US);
Martin Niset, Seattle, WA (US);
Mads Hommelgaard, Kirkland, WA (US);
Andrew Horch, Seattle, WA (US);
Martin Niset, Seattle, WA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
A solid-state non-volatile memory (NVM) device includes a memory bit cell. The memory bit cell includes a field effect transistor (FET) fabricated on a substrate and having a floating gate. The floating gate includes a thick oxide layer. The FET includes drain and source, each fabricated within the substrate and coupled to the floating gate and a channel region with native doping. The drain is fabricated to have a halo region. A method for fabricating a solid-state NVM device includes fabricating solid state device including NVM bit cell which provides multiple storage and includes an FET on substrate. The method also includes fabricating floating gate of the FET including thick gate oxide layer, and fabricating drain and source of FET within the substrate, drain and source coupled to the floating gate and channel region with native doping. Further, the method includes fabricating halo region within the substrate at the drain.