The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Sep. 24, 2015
Intel Ip Corporation, Santa Clara, CA (US);
Cyrille Dray, Hillsboro, OR (US);
El Mehdi Boujamaa, Grasse, FR;
Intel IP Corporation, Santa Clara, CA (US);
Abstract
Embodiments include a sense amplifier circuit including first and second paths that may be selectively coupled to a memory cell or a reference cell as part of a two-phase read process. The sense amplifier may include a biasing circuit to provide an adaptive bias voltage to a transistor of the first and/or second path to cause the transistor to provide a voltage across the memory cell and/or reference cell that is substantially constant across process corners. Additionally, or alternatively, the sense amplifier may include a DC-coupled regenerative latch circuit to generate a digital output signal based on a voltage difference between nodes of the first and second paths at or near the end of the second phase. Additionally, or alternatively, trimmable offset resistors may adjust a resistance value provided to the sense amplifier by the memory cell and/or reference cells. Other embodiments may be described and claimed.