The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Jun. 27, 2011
Applicants:

Ning GE, Singapore, SG;

Trudy Benjamin, Portland, OR (US);

Teck-khim Neo, Singapore, SG;

Joseph M. Torgerson, Philomath, OR (US);

Neel Banerjee, Corvallis, OR (US);

George H. Corrigan, Iii, Corvallis, OR (US);

Inventors:

Ning Ge, Singapore, SG;

Trudy Benjamin, Portland, OR (US);

Teck-Khim Neo, Singapore, SG;

Joseph M. Torgerson, Philomath, OR (US);

Neel Banerjee, Corvallis, OR (US);

George H. Corrigan, III, Corvallis, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01F 23/26 (2006.01); B41J 2/175 (2006.01); B41J 2/14 (2006.01);
U.S. Cl.
CPC ...
G01F 23/263 (2013.01); B41J 2/14153 (2013.01); B41J 2/175 (2013.01); B41J 2/17566 (2013.01);
Abstract

In an embodiment, a method of sensing an ink level includes applying a pre-charge voltage Vp to a sense capacitor to charge the sense capacitor with a charge Q, sharing Qbetween the sense capacitor and a reference capacitor, causing a reference voltage Vg at the gate of an evaluation transistor, and determining a resistance from drain to source of the evaluation transistor that results from Vg.


Find Patent Forward Citations

Loading…