The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Sep. 05, 2014
Magnetic memory having magnetoresistive element and method of manufacturing magnetoresistive element
Masatoshi Yoshikawa, Seoul, KR;
Yasuyuki Sonoda, Seoul, KR;
Satoshi Seto, Seoul, KR;
Shuichi Tsubata, Seoul, KR;
Kazuhiro Tomioka, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Yasuyuki Sonoda, Seoul, KR;
Satoshi Seto, Seoul, KR;
Shuichi Tsubata, Seoul, KR;
Kazuhiro Tomioka, Seoul, KR;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.