The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jul. 18, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Wei-Hang Huang, Kaohisung, TW;
Shih-Chang Liu, Alian Township, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.