The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Aug. 13, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Mitsuyoshi Endo, Yamato, JP;

Shuji Itonaga, Yokohama, JP;

Miyuki Shimojuku, Kawasaki, JP;

Yukihiro Nomura, Fuchu, JP;

Hideto Furuyama, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/22 (2006.01); H01L 27/14 (2006.01); H01L 21/00 (2006.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/56 (2010.01); H01L 33/42 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0008 (2013.01); H01L 33/005 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01);
Abstract

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a second layer including a p-type semiconductor, a light emitting layer, a first surface, and a second surface opposite to the first surface; an n-side electrode; a p-side electrode; a third layer; an insulating member; an n-side metal portion; and a p-side metal portion. The insulating member has a lower surface. A height of the lower surface is higher than a height of the first surface. The insulating member covers a periphery of the third layer, and has light reflectivity on at least a surface of a part adjacent to a side surface of the third layer.


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