The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Mar. 14, 2016
United Microelectronics Corp., Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device with embedded cell is provided. A silicon substrate has a first area with at least one first cell and a second area with at least one second cell. The first cell is positioned in the first area and formed in a trench of the silicon substrate, and the second cell is positioned in the second area and formed on the silicon substrate. The first cell includes a first dielectric layer formed on sidewalls and a bottom of the trench, a floating gate formed on the first dielectric layer and embedded in the trench, a second dielectric layer formed on the floating gate and embedded in the trench, and a control gate formed on the second dielectric layer and embedded in the trench, wherein the control gate is separated from the floating gate by the second dielectric layer.