The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Jun. 29, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Shih-Ping Hong, Hsinchu County, TW;

Yu-Cheng Liu, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); B08B 9/08 (2006.01); B08B 7/00 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B08B 7/0035 (2013.01); B08B 9/0865 (2013.01); C23C 16/4405 (2013.01); H01L 21/0206 (2013.01); H01L 21/02041 (2013.01); H01L 21/02334 (2013.01); H01L 21/32 (2013.01); H01L 21/67069 (2013.01);
Abstract

A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.


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