The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Oct. 20, 2011
Ming Zhu, Singapore, SG;
Hui-wen Lin, Taiping, TW;
Harry-hak-lay Chuang, Singapore, SG;
Bao-ru Young, Zhubei, TW;
Yuan-sheng Huang, Taichung, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Chao-cheng Chen, Shin-Chu, TW;
Kuo-cheng Ching, Zhubei, TW;
Ting-hua Hsieh, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Ming Zhu, Singapore, SG;
Hui-Wen Lin, Taiping, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Bao-Ru Young, Zhubei, TW;
Yuan-Sheng Huang, Taichung, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Kuo-Cheng Ching, Zhubei, TW;
Ting-Hua Hsieh, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA (US);
Abstract
The invention relates to integrated circuit fabrication, and more particularly to a metal gate structure. An exemplary structure for a CMOS semiconductor device comprises a substrate comprising an isolation region surrounding and separating a P-active region and an N-active region; a P-metal gate electrode over the P-active region and extending over the isolation region, wherein the P-metal gate electrode comprises a P-work function metal and an oxygen-containing TiN layer between the P-work function metal and substrate; and an N-metal gate electrode over the N-active region and extending over the isolation region, wherein the N-metal gate electrode comprises an N-work function metal and a nitrogen-rich TiN layer between the N-work function metal and substrate, wherein the nitrogen-rich TiN layer connects to the oxygen-containing TiN layer over the isolation region.