The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Aug. 12, 2015
Applicant:

National Applied Research Laboratories, Taipei, TW;

Inventors:

Chun-Fu Lin, Taichung, TW;

Chun-Li Chang, Chiayi County, TW;

Tai-Shan Liao, Hsinchu, TW;

Hung-Ji Huang, Hsinchu, TW;

Chi-Hung Huang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/86 (2006.01); G01N 21/88 (2006.01); G01N 21/59 (2006.01);
U.S. Cl.
CPC ...
G01N 21/59 (2013.01); G01N 2201/12 (2013.01);
Abstract

An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.


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