The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Feb. 20, 2015
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Mark J. Willey, Portland, OR (US);

Steven T. Mayer, Lake Oswego, OR (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 3/38 (2006.01); C25D 21/12 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); C25D 7/12 (2006.01); C25D 5/02 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C25D 3/38 (2013.01); C25D 5/022 (2013.01); C25D 7/123 (2013.01); C25D 21/12 (2013.01); H01L 21/2885 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 23/53228 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.


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