The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Oct. 31, 2012
Applicants:

Thierry Sicard, Auzeville Tolosane, FR;

Philippe Perruchoud, Tournefeuille, FR;

Inventors:

Thierry Sicard, Auzeville Tolosane, FR;

Philippe Perruchoud, Tournefeuille, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/567 (2006.01); H02M 1/08 (2006.01); H02M 1/36 (2007.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H02M 1/08 (2013.01); H02M 1/36 (2013.01); H03K 17/0828 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A start-up method for a self-powered gate drive circuit driving a power transistor gate. The method comprises charging, with a single-supply voltage, a first supply capacitor of a first gate drive circuit; switching on a first power transistor by applying a current supplied by a discharge of the first supply capacitor of the first gate drive circuit to the gate of the first power transistor; charging a second supply capacitor of the first gate drive circuit using an output signal from the first power transistor; and re-charging the first supply capacitor by applying a current supplied by a discharge of the second supply capacitor to the first capacitor.


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